英文名称 : Dimensions of outlines for semiconductor discrete devices

内容简介 :

英文名称 : Blank detail specification for case-rated bipolar transistors for low-frequency amplification

内容简介 :

英文名称 : Semiconductor devices—Discrete devices Part 7:Bipolar transistors Section Four—Blank detail specification for case-rated bipolar transistors for high-frequency amplification

内容简介 :

英文名称 : Semiconductor devices—Discrete devices—Part 3:Signal(including switching)and regulator diodes

内容简介 :

英文名称 : Blank detail specification for industrial heating triodes

内容简介 :

英文名称 : Semiconductor devices-Discrete devices Part 8:Field-effect transistors Section One-Blank detail specification for singe-gate field-effect transistors up to 5W and 1GHz

内容简介 :

英文名称 : Blank detail specification for bipolar transistors for switching applications

内容简介 :

英文名称 : Semiconductor devices-Discrete devices Part 7:Bipolar transistors Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification

内容简介 :

英文名称 : Semiconductor devices Discrete devices—Part 8:Field-effect transistors

内容简介 :

英文名称 : Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT)

内容简介 : 本标准给出了绝缘栅双极晶体管（IGBT）的术语、文字符号、基本额定值和特性以及测试方法等产品特定要求。